Planar graphene-narrow-gap semiconductor-graphene heterostructure
نویسندگان
چکیده
منابع مشابه
Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes
S. Tongay, M. Lemaitre, X. Miao, B. Gila, B. R. Appleton, and A. F. Hebard Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA Department of Physics, University of Florida, Gainesville, Florida 32611, USA Nanoscience Institute for Medical and Engineering Technology, University of Florida, Gainesville, Florida 32611, USA (Received 24 May 2011; published 17 J...
متن کاملGraphene/h-BN Heterostructure Interconnects
The material behavior of graphene, a single layer of carbon lattice, is extremely sensitive to its dielectric environment. We demonstrate improvement in electronic performance of graphene nanowire interconnects with full encapsulation by lattice-matching, chemically inert, 2D layered insulator hexagonal boron nitride (hBN). A novel layer-based transfer technique is developed to construct the h-...
متن کاملTunable transport gap in narrow bilayer graphene nanoribbons
The lack of a bandgap makes bulk graphene unsuitable for room temperature transistors with a sufficient on/off current ratio. Lateral constriction of charge carriers in graphene nanostructures or vertical inversion symmetry breaking in bilayer graphene are two potential strategies to mitigate this challenge, but each alone is insufficient to consistently achieve a large enough on/off ratio (e.g...
متن کاملGraphene-based semiconductor photocatalysts.
Graphene, a single layer of graphite, possesses a unique two-dimensional structure, high conductivity, superior electron mobility and extremely high specific surface area, and can be produced on a large scale at low cost. Thus, it has been regarded as an important component for making various functional composite materials. Especially, graphene-based semiconductor photocatalysts have attracted ...
متن کاملGraphene/Si-nanowire heterostructure molecular sensors
Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from bei...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Bulletin of the Lebedev Physics Institute
سال: 2008
ISSN: 1068-3356,1934-838X
DOI: 10.3103/s106833560811002x